Specification	FQA55N25

Current - Continuous Drain (Id) @ 25°C	55 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	180 nC
Input Capacitance (Ciss) (Max) @ Vds	6250 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	310 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	TO-3PN
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQA55N25 Series

Power MOSFET, N-Channel, QFET®, 250 V, 55 A, 40 mΩ, TO-3P

Part	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FQA55N25	N-Channel	Through Hole	10 V	MOSFET (Metal Oxide)	250 V	-55 °C	150 °C	TO-3PN	5 V	180 nC	SC-65-3 TO-3P-3	55 A	310 W	40 mOhm	30 V	6250 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQA55N25 Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.