Specification	MJE5742G

Current - Collector (Ic) (Max) [Max]	8 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200 hFE
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power - Max [Max]	2 W
Supplier Device Package	TO-220
Vce Saturation (Max) @ Ib, Ic [Max]	3 V
Voltage - Collector Emitter Breakdown (Max)	400 V

MJE5742 Series

8.0 A, 400 V NPN Darlington Bipolar Power Transistor

Part	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	Mounting Type	Power - Max [Max]
ON Semiconductor MJE5742G	TO-220	150 °C	-65 °C	TO-220-3	400 V	200 hFE	8 A	3 V	Through Hole	2 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The MJE5742 Darlington transistors is designed for high voltage power switching in inductive circuits.

Technical documentation and resources