Discrete Semiconductor Products

FDP120AN15A0

Obsolete

MOSFET N-CH 150V 2.8A/14A TO220

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 150V 2.8A/14A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	FDP120AN15A0

Current - Continuous Drain (Id) @ 25°C	2.8 A, 14 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14.5 nC
Input Capacitance (Ciss) (Max) @ Vds	770 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	65 W
Rds On (Max) @ Id, Vgs	120 mΩ
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDP120AN15A0	2.8 A 14 A	120 mΩ	65 W	TO-220-3	150 V	Through Hole	14.5 nC	N-Channel	-55 °C	175 ░C	6 V 10 V	20 V	4 V	TO-220-3	MOSFET (Metal Oxide)	770 pF
ON Semiconductor FDP120AN15A0	2.8 A 14 A	120 mΩ	65 W	TO-220-3	150 V	Through Hole	14.5 nC	N-Channel	-55 °C	175 ░C	6 V 10 V	20 V	4 V	TO-220-3	MOSFET (Metal Oxide)	770 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 150 V 2.8A (Ta), 14A (Tc) 65W (Tc) Through Hole TO-220-3

Technical documentation and resources