Discrete Semiconductor Products

RJK0853DPB-00#J5

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MOSFET, N-CH, 80V, 40A, LFPAK ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

MOSFET, N-CH, 80V, 40A, LFPAK ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0853DPB-00#J5

Current - Continuous Drain (Id) @ 25°C	40 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	6170 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	65 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 80V 40A 8mohm LFPAK56

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	FET Type	Technology	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation RJK0853DPB-00#J5	6170 pF	20 V	SC-100 SOT-669	40 nC	8 mOhm	150 °C	4.5 V 10 V	40 A	65 W	N-Channel	MOSFET (Metal Oxide)	LFPAK	Surface Mount	80 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources