Discrete Semiconductor Products

IRFZ20PBF-BE3

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MOSFET N-CH 50V 15A TO220AB

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Discrete Semiconductor Products

Active

MOSFET N-CH 50V 15A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRFZ20PBF-BE3

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	860 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Technology	Mounting Type
Vishay General Semiconductor - Diodes Division IRFZ20PBF-BE3	860 pF	40 W	17 nC	20 V	N-Channel	4 V	TO-220-3	-55 °C	150 °C	15 A	TO-220AB	50 V	100 mOhm	MOSFET (Metal Oxide)	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 50 V 15A (Tc) 40W (Tc) Through Hole TO-220AB

Technical documentation and resources