Discrete Semiconductor Products

FQN1N50CBU

Obsolete

MOSFET N-CH 500V 380MA TO92-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 500V 380MA TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	FQN1N50CBU

Current - Continuous Drain (Id) @ 25°C	380 mA
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.4 nC
Input Capacitance (Ciss) (Max) @ Vds	195 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max)	890 mW, 2.08 W
Rds On (Max) @ Id, Vgs	6 Ohm
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case
ON Semiconductor FQN1N50CBU	N-Channel	30 V	6 Ohm	500 V	195 pF	Through Hole	6.4 nC	380 mA	MOSFET (Metal Oxide)	4 V	-55 °C	150 °C	2.08 W 890 mW	10 V	TO-92-3	TO-226-3 TO-92-3
ON Semiconductor FQN1N50CBU	N-Channel	30 V	6 Ohm	500 V	195 pF	Through Hole	6.4 nC	380 mA	MOSFET (Metal Oxide)	4 V	-55 °C	150 °C	2.08 W 890 mW	10 V	TO-92-3	TO-226-3 TO-92-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 380mA (Tc) 890mW (Ta), 2.08W (Tc) Through Hole TO-92-3

Technical documentation and resources

No documents available