Discrete Semiconductor Products

VS-12F80

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DIODE GEN PURP 800V 12A DO203AA

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Discrete Semiconductor Products

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DIODE GEN PURP 800V 12A DO203AA

Technical Specifications

Parameters and characteristics for this part

Specification	VS-12F80

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	12 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AA, Stud, DO-4
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-4
Supplier Device Package	DO-203AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.26 V

Part	Speed [Min]	Supplier Device Package	Supplier Device Package	Current - Average Rectified (Io)	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Voltage - DC Reverse (Vr) (Max) [Max]
Vishay General Semiconductor - Diodes Division VS-12F80	200 mA 500 ns	DO-4	DO-203AA	12 A	DO-203AA DO-4 Stud	Chassis Stud Mount	12 mA	175 ░C	-65 C	1.26 V	Standard	800 V

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General part information

Diode 800 V 12A Chassis, Stud Mount DO-203AA (DO-4)

Technical documentation and resources