FDP65N06
ObsoletePOWER MOSFET, N-CHANNEL, UNIFET<SUP>TM</SUP>, 60 V, 65 A, 16 MΩ, TO-220
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FDP65N06
ObsoletePOWER MOSFET, N-CHANNEL, UNIFET<SUP>TM</SUP>, 60 V, 65 A, 16 MΩ, TO-220
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDP65N06 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 65 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2170 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 135 W |
| Rds On (Max) @ Id, Vgs | 16 mOhm |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
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Description
General part information
FDP65N06 Series
UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Documents
Technical documentation and resources