Discrete Semiconductor Products

MSS1P6HM3J_A/H

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DIODE SCHOTTKY 60V 1A MICROSMP

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Discrete Semiconductor Products

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DIODE SCHOTTKY 60V 1A MICROSMP

Technical Specifications

Parameters and characteristics for this part

Specification	MSS1P6HM3J_A/H

Capacitance @ Vr, F	40 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	150 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-219AD
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	DO-219AD (MicroSMP)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V

Part	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Speed	Technology	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Qualification	Grade
Vishay General Semiconductor - Diodes Division MSS1P6-E3/89A	Surface Mount	150 °C	-55 °C	DO-219AD	200 mA 500 ns	Schottky	150 µA	1 A	DO-219AD (MicroSMP)	60 V	40 pF
Vishay General Semiconductor - Diodes Division MSS1P6HM3/89A	Surface Mount	150 °C	-55 °C	DO-219AD	200 mA 500 ns	Schottky	150 µA	1 A	DO-219AD (MicroSMP)	60 V	40 pF	AEC-Q101	Automotive
Vishay General Semiconductor - Diodes Division MSS1P6HM3J_A/H	Surface Mount	150 °C	-55 °C	DO-219AD	200 mA 500 ns	Schottky	150 µA	1 A	DO-219AD (MicroSMP)	60 V	40 pF	AEC-Q101	Automotive

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General part information

Diode 60 V 1A Surface Mount DO-219AD (MicroSMP)

Technical documentation and resources