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MCT03N06-TP
Discrete Semiconductor Products

MCT04P06-TP

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Micro Commercial Components

POWER FIELD-EFFECT TRANSISTOR,

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MCT03N06-TP
Discrete Semiconductor Products

MCT04P06-TP

Active
Micro Commercial Components

POWER FIELD-EFFECT TRANSISTOR,

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationMCT04P06-TP
Current - Continuous Drain (Id) @ 25°C3.5 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12 nC
Input Capacitance (Ciss) (Max) @ Vds650 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-261AA, TO-261-4
Rds On (Max) @ Id, Vgs80 mOhm
Supplier Device PackageSOT-223
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.69
Digi-Reel® 1$ 0.69
Tape & Reel (TR) 30000$ 0.23

Description

General part information

MCT04 Series

P-Channel 60 V 3.5A (Tj) 2W Surface Mount SOT-223

Documents

Technical documentation and resources