Specification	FFSH2065ADN-F155

Capacitance @ Vr, F	575 pF
Current - Average Rectified (Io)	13 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V

FFSH2065ADN-F155 Series

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D1, TO-247-2L

Part	Technology	Supplier Device Package	Package / Case	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Qualification	Grade	Voltage - Forward (Vf) (Max) @ If
ON Semiconductor FFSH2065ADN-F155	SiC (Silicon Carbide) Schottky	TO-247-3	TO-247-3	200 µA	Through Hole	650 V	13 A	No Recovery Time	175 ░C	-55 C	575 pF
ON Semiconductor FFSH2065BDN-F085	SiC (Silicon Carbide) Schottky	TO-247-3	TO-247-3	40 µA	Through Hole	650 V		No Recovery Time	175 ░C	-55 C		AEC-Q101	Automotive	1.7 V
ON Semiconductor FFSH2065A	SiC (Silicon Carbide) Schottky	TO-247-2	TO-247-2	200 µA	Through Hole	650 V	25 A	No Recovery Time	175 ░C	-55 C	1085 pF
ON Semiconductor FFSH2065B-F085	SiC (Silicon Carbide) Schottky	TO-247-2	TO-247-2	40 µA	Through Hole	650 V		No Recovery Time	175 ░C	-55 C	866 pF	AEC-Q101	Automotive	1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 9.73
		10	$ 6.69
		100	$ 4.96
		500	$ 4.40

Description

General part information

FFSH2065ADN-F155 Series

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Documents

Technical documentation and resources

Package Drawing-340CH-TO-247-3LD

Package Drawing

Datasheet

Product Change Notice EN

Datasheet

Technical Data Sheet EN

Datasheet