Specification	FCA35N60

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	181 nC
Input Capacitance (Ciss) (Max) @ Vds	6640 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	312.5 W
Rds On (Max) @ Id, Vgs	98 mOhm
Supplier Device Package	TO-3PN
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FCA35N60 Series

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 35 A, 98 mΩ, TO-3P

Part	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)	Mounting Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FCA35N60	-55 °C	150 °C	N-Channel	30 V	Through Hole	312.5 W	5 V	MOSFET (Metal Oxide)	600 V	SC-65-3 TO-3P-3	10 V	98 mOhm	35 A	181 nC	TO-3PN	6640 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FCA35N60 Series

SuperFET®MOSFET is the first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.