Discrete Semiconductor Products

RN2105,LF(CT

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TRANS DIGITAL BJT PNP 50V 0.1A 100MW 3-PIN SSM T/R AUTOMOTIVE AEC-Q101

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Discrete Semiconductor Products

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TRANS DIGITAL BJT PNP 50V 0.1A 100MW 3-PIN SSM T/R AUTOMOTIVE AEC-Q101

Technical Specifications

Parameters and characteristics for this part

Specification	RN2105,LF(CT

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-416, SC-75
Power - Max [Max]	100 mW
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	47 kOhms
Supplier Device Package	SSM
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistor - Base (R1)	Frequency - Transition	Power - Max [Max]	Transistor Type	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Resistor - Emitter Base (R2)	Package / Case	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]
Toshiba Semiconductor and Storage RN2105,LF(CT	80	50 V	2.2 kOhm	200 MHz	100 mW	PNP - Pre-Biased	SSM	300 mV	Surface Mount	47 kOhms	SC-75 SOT-416	500 nA	100 mA
Toshiba Semiconductor and Storage RN2105MFV,L3F(CT	80	50 V	2.2 kOhm	250 MHz	150 mW	PNP - Pre-Biased	VESM	300 mV	Surface Mount	47 kOhms	SOT-723	500 nA	100 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SSM

Technical documentation and resources