IXTP80N10T
ActiveDISCMSFT NCHTRENCHGATE-GEN1 TO-220AB/FP
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IXTP80N10T
ActiveDISCMSFT NCHTRENCHGATE-GEN1 TO-220AB/FP
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IXTP80N10T |
|---|---|
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 60 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3040 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 230 W |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 3.31 | |
| 50 | $ 2.62 | |||
| 100 | $ 2.25 | |||
| 500 | $ 2.00 | |||
| 1000 | $ 1.71 | |||
| 2000 | $ 1.61 | |||
| 5000 | $ 1.54 | |||
Description
General part information
IXTP80N10T Series
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density
Documents
Technical documentation and resources