Discrete Semiconductor Products

HAT2218R-EL-E

Obsolete

MOSFET 2N-CH 30V 7.5A/8A 8SOP

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 7.5A/8A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	HAT2218R-EL-E

Configuration	2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C	8 A, 7.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs	4.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	630 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)

Part	Power - Max [Max]	Mounting Type	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Operating Temperature	FET Feature	Configuration	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation HAT2218R-EL-E	1.5 W	Surface Mount	8-SOP	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	150 °C	4.5V Drive Logic Level Gate	2 N-Channel (Dual) Asymmetrical	4.6 nC	24 mOhm	630 pF	7.5 A 8 A	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	361	$ 0.83

General part information

Mosfet Array 30V 7.5A, 8A 1.5W Surface Mount 8-SOP

Technical documentation and resources

No documents available