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Power56
Discrete Semiconductor Products

FDWS86369-F085

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 80V, 65A, 7.5MΩ

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Power56
Discrete Semiconductor Products

FDWS86369-F085

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 80V, 65A, 7.5MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDWS86369-F085
Current - Continuous Drain (Id) @ 25°C65 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs46 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds2470 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)107 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs7.5 mOhm
Supplier Device PackagePower56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.20
10$ 1.41
100$ 0.96
500$ 0.77
1000$ 0.70
Digi-Reel® 1$ 2.20
10$ 1.41
100$ 0.96
500$ 0.77
1000$ 0.70
Tape & Reel (TR) 3000$ 0.63
6000$ 0.62
NewarkEach (Supplied on Full Reel) 3000$ 0.82
6000$ 0.74
12000$ 0.67
18000$ 0.65
30000$ 0.63
ON SemiconductorN/A 1$ 0.57

Description

General part information

FDWS86369_F085 Series

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.