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TO-3P
Discrete Semiconductor Products

IXTQ110N10P

Active
Littelfuse/Commercial Vehicle Products

DISC MOSFET N-CH STD-POLAR TO-3P (3)/ TUBE

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TO-3P
Discrete Semiconductor Products

IXTQ110N10P

Active
Littelfuse/Commercial Vehicle Products

DISC MOSFET N-CH STD-POLAR TO-3P (3)/ TUBE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTQ110N10P
Current - Continuous Drain (Id) @ 25°C110 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]110 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]3550 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-65-3, TO-3P-3
Power Dissipation (Max)480 W
Rds On (Max) @ Id, Vgs [Max]15 mOhm
Supplier Device PackageTO-3P
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 7.01
30$ 5.60
120$ 5.01
510$ 4.42
1020$ 3.98
2010$ 3.73
NewarkEach 100$ 5.20
500$ 4.73
1000$ 4.18
2500$ 3.89

Description

General part information

IXTQ110N10P Series

Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density

Documents

Technical documentation and resources