Discrete Semiconductor Products
RGCL60TS60DGC13
NRNDRohm Semiconductor
LOW VCE(SAT)TYPE, 600V 30A, FRD BUILT-IN, TO-247GE, FIELD STOP TRENCH IGBT
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Discrete Semiconductor Products
RGCL60TS60DGC13
NRNDRohm Semiconductor
LOW VCE(SAT)TYPE, 600V 30A, FRD BUILT-IN, TO-247GE, FIELD STOP TRENCH IGBT
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Technical Specifications
Parameters and characteristics for this part
| Specification | RGCL60TS60DGC13 |
|---|---|
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 68 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 111 W |
| Reverse Recovery Time (trr) | 58 ns |
| Supplier Device Package | TO-247G |
| Switching Energy | 770 µJ, 1.11 mJ |
| Td (on/off) @ 25°C [custom] | 186 ns |
| Td (on/off) @ 25°C [custom] | 44 ns |
| Test Condition | 30 A, 10 Ohm, 15 V, 400 V |
| Vce(on) (Max) @ Vge, Ic | 1.8 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RGCL60TS60D Series
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Documents
Technical documentation and resources