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TO-126
Discrete Semiconductor Products

BD179

Obsolete
ON Semiconductor

3.0 A, 80 V MEDIUM POWER NPN BIPOLAR POWER TRANSISTOR

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TO-126
Discrete Semiconductor Products

BD179

Obsolete
ON Semiconductor

3.0 A, 80 V MEDIUM POWER NPN BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBD179
Current - Collector (Ic) (Max) [Max]3 A
Current - Collector Cutoff (Max) [Max]100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]63 hFE
Frequency - Transition3 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-225AA, TO-126-3
Power - Max [Max]30 W
Supplier Device PackageTO-126
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic800 mV
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

BD179%20(LEGACY%20FAIRCHILD) Series

The Medium Power NPN Bipolar Power Transistor is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.Replacement Active Part Number:BD179