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Technical Specifications
Parameters and characteristics for this part
| Specification | QH8MA4TCR |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8 A, 9 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Power - Max [Max] | 1.5 W |
| Rds On (Max) @ Id, Vgs | 16 mOhm |
| Supplier Device Package | TSMT8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
QH8MA4 Series
The Middle Power MOSFET QH8MA4 is suitable for switching power supply.
Documents
Technical documentation and resources