Discrete Semiconductor Products

SI3590DV-T1-E3

LTB

MOSFET N/P-CH 30V 2.5A 6TSOP

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Discrete Semiconductor Products

LTB

MOSFET N/P-CH 30V 2.5A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI3590DV-T1-E3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	2.5 A, 1.7 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	4.5 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	830 mW
Rds On (Max) @ Id, Vgs	77 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	FET Feature	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Configuration	Rds On (Max) @ Id, Vgs	Mounting Type
Vishay General Semiconductor - Diodes Division SI3590DV-T1-E3	Logic Level Gate	6-TSOP	1.5 V	30 V	830 mW	1.7 A 2.5 A	MOSFET (Metal Oxide)	4.5 nC	-55 °C	150 °C	SOT-23-6 Thin TSOT-23-6	N and P-Channel	77 mOhm	Surface Mount

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General part information

Mosfet Array 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP

Technical documentation and resources