Discrete Semiconductor Products

CSD75211W1723

Obsolete

MOSFET 2P-CH 20V 4.5A 12DSBGA

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Discrete Semiconductor Products

Obsolete

MOSFET 2P-CH 20V 4.5A 12DSBGA

Technical Specifications

Parameters and characteristics for this part

Specification	CSD75211W1723

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	5.9 nC
Input Capacitance (Ciss) (Max) @ Vds	600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	12-UFBGA, DSBGA
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	12-DSBGA
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.1 V

Part	Supplier Device Package	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Configuration
Texas Instruments CSD75211W1723	12-DSBGA	1.5 W	4.5 A	1.1 V	MOSFET (Metal Oxide)	-55 °C	150 °C	600 pF	Logic Level Gate	20 V	Surface Mount	40 mOhm	5.9 nC	12-UFBGA DSBGA	2 P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 4.5A 1.5W Surface Mount 12-DSBGA

Technical documentation and resources