Discrete Semiconductor Products

CDBGBSC20650-G

Obsolete

RECTIFIER DIODE SCHOTTKY SIC 650V 10A 3-PIN(3+TAB) TO-247 TUBE

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

RECTIFIER DIODE SCHOTTKY SIC 650V 10A 3-PIN(3+TAB) TO-247 TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	CDBGBSC20650-G

Current - Average Rectified (Io) (per Diode)	33 A
Current - Reverse Leakage @ Vr	100 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Mounting Type	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr	Technology	Package / Case	Speed	Voltage - Forward (Vf) (Max) @ If
Comchip Technology CDBGBSC20650-G	175 ░C	-55 C	0 ns	TO-247	650 V	1 Pair Common Cathode	Through Hole	33 A	100 µA	SiC (Silicon Carbide) Schottky	TO-247-3	No Recovery Time	1.7 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 650 V 33A (DC) Through Hole TO-247-3

Technical documentation and resources

No documents available