Discrete Semiconductor Products
YQ20BGE10SDTL
ActiveRohm Semiconductor
TRENCH MOS STRUCTURE, 100V, 20A, TO-252, HIGHLY EFFICIENT SBD
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Discrete Semiconductor Products
YQ20BGE10SDTL
ActiveRohm Semiconductor
TRENCH MOS STRUCTURE, 100V, 20A, TO-252, HIGHLY EFFICIENT SBD
Technical Specifications
Parameters and characteristics for this part
| Specification | YQ20BGE10SDTL |
|---|---|
| Current - Reverse Leakage @ Vr | 80 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150 ¯C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-252GE |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 860 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
YQ20BGE10SD Series
The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VFand low IR. While its low VFit achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications. A miniaturized, thin and wireless TO-252 package.
Documents
Technical documentation and resources