Discrete Semiconductor Products

NGTB50N65FL2WAG

Obsolete

ON Semiconductor

IGBT, 650 V FIELD STOP II, 50 A

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Discrete Semiconductor Products

NGTB50N65FL2WAG

Obsolete

ON Semiconductor

IGBT, 650 V FIELD STOP II, 50 A

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NGTB50N65FL2WAG

Current - Collector (Ic) (Max) [Max]	160 A
Gate Charge	215 nC
IGBT Type	Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power - Max [Max]	417 W
Reverse Recovery Time (trr)	94 ns
Supplier Device Package	TO-247-4L
Switching Energy	420 µJ, 550 µJ
Td (on/off) @ 25°C	23 ns, 123 ns
Test Condition [custom]	400 V, 15 V
Test Condition [custom]	10 Ohm
Test Condition [custom]	50 A
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max)	650 V

NGTB50N65FL2WA Series

IGBT, 600 V, 50 A, FS1 Solar/UPS

Part	IGBT Type	Reverse Recovery Time (trr)	Switching Energy	Current - Collector Pulsed (Icm)	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]	Test Condition [custom]	Test Condition [custom]	Test Condition [custom]	Gate Charge	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Test Condition
ON Semiconductor NGTB50N65FL2WG	Trench Field Stop	94 ns	1.5 mJ 460 µJ	200 A	417 W	-55 °C	175 ░C	Through Hole	TO-247-3	650 V	100 ns 237 ns	2 V	100 A	15 V 400 V	10 Ohm	50 A	220 nC	TO-247-3
ON Semiconductor NGTB50N60FLWG	Trench Field Stop	85 ns	1.1 mJ 600 µJ	200 A	223 W	-55 °C	150 °C	Through Hole	TO-247-3			1.9 V	100 A	15 V 400 V	10 Ohm	50 A	310 nC	TO-247-3	600 V	116 ns 292 ns
ON Semiconductor NGTB50N65FL2WAG	Field Stop	94 ns	420 µJ 550 µJ		417 W	-55 °C	175 ░C	Through Hole	TO-247-4	650 V	23 ns 123 ns	2 V	160 A	15 V 400 V	10 Ohm	50 A	215 nC	TO-247-4L
ON Semiconductor NGTB50N120FL2WG	Trench Field Stop	256 ns	1.4 mJ 4.4 mJ	200 A	535 W	-55 °C	175 ░C	Through Hole	TO-247-3		118 ns	2.2 V	100 A				311 nC	TO-247	1200 V		282 ns	10 Ohm 15 V 50 A 600 V
ON Semiconductor NGTB50N60FWG
ON Semiconductor NGTB50N60S1WG	Trench	94 ns	1.5 mJ 460 µJ	200 A	417 W	-55 °C	175 ░C	Through Hole	TO-247-3		100 ns 237 ns	2 V	100 A	15 V 400 V	10 Ohm	50 A	220 nC	TO-247-3	600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NGTB50N65FL2WA Series

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO-247-4L, package that provides significant reduction in Eon Losses compared to standard TO-247-3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Documents

Technical documentation and resources