Discrete Semiconductor Products

SQ1431EH-T1_GE3

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MOSFET P-CH 30V 3A SC70-6

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Discrete Semiconductor Products

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MOSFET P-CH 30V 3A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SQ1431EH-T1_GE3

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	6.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	205 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max) [Max]	3 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	175 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Qualification	Grade	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SQ1431EH-T1_GE3	-55 °C	175 ░C	2 V	AEC-Q101	Automotive	SC-70-6	MOSFET (Metal Oxide)	3 A	4.5 V 10 V	Surface Mount	P-Channel	20 V	30 V	205 pF	6.5 nC	6-TSSOP SC-88 SOT-363	3 W	175 mOhm

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General part information

P-Channel 30 V 3A (Tc) 3W (Tc) Surface Mount SC-70-6

Technical documentation and resources