Discrete Semiconductor Products

IXFX44N80P

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Littelfuse/Commercial Vehicle Products

DISCMOSFETN-CH HIPERFET-POLAR TO-247AD/ TUBE

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Discrete Semiconductor Products

IXFX44N80P

Active

Littelfuse/Commercial Vehicle Products

DISCMOSFETN-CH HIPERFET-POLAR TO-247AD/ TUBE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX44N80P

Current - Continuous Drain (Id) @ 25°C	44 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	198 nC
Input Capacitance (Ciss) (Max) @ Vds	12000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	1040 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

IXFX44N80Q3 Series

DiscMosfetN-CH HiPerFET-Polar TO-247AD

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Littelfuse/Commercial Vehicle Products IXFX44N60	20 V	8900 pF	330 nC	N-Channel	PLUS247™-3	4.5 V	TO-247-3 Variant	130 mOhm	10 V	MOSFET (Metal Oxide)	44 A	560 W	Through Hole	-55 °C	150 °C	600 V
Littelfuse/Commercial Vehicle Products IXFX44N80P	30 V			N-Channel	PLUS247™-3	5 V	TO-247-3 Variant	190 mOhm	10 V	MOSFET (Metal Oxide)	44 A		Through Hole	-55 °C	150 °C	800 V	1040 W	12000 pF	198 nC
Littelfuse/Commercial Vehicle Products IXFX44N80Q3	30 V	9840 pF		N-Channel	PLUS247™-3	6.5 V	TO-247-3 Variant	190 mOhm	10 V	MOSFET (Metal Oxide)	44 A		Through Hole	-55 °C	150 °C	800 V	1250 W		185 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 12.97
Newark	Each	250	$ 14.64
		250	$ 14.64
		500	$ 13.60
		500	$ 13.60

Description

General part information

IXFX44N80Q3 Series

The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device. Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings

Documents

Technical documentation and resources