Specification	FFSD0665A

Capacitance @ Vr, F	361 pF
Current - Average Rectified (Io)	11 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-252 (DPAK)
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.75 V

FFSD0665B-F085 Series

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D1, DPAK

Part	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Average Rectified (Io)	Speed	Technology	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type
ON Semiconductor FFSD0665B	259 pF	40 µA	1.7 V	650 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	9.1 A	No Recovery Time	SiC (Silicon Carbide) Schottky	TO-252 (DPAK)	175 ░C	-55 C	Surface Mount
ON Semiconductor FFSD0665A	361 pF	200 µA	1.75 V	650 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	11 A	No Recovery Time	SiC (Silicon Carbide) Schottky	TO-252 (DPAK)	175 ░C	-55 C	Surface Mount
ON Semiconductor FFSD0665B-F085	259 pF	40 µA	1.7 V	650 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	9.1 A	No Recovery Time	SiC (Silicon Carbide) Schottky	TO-252 (DPAK)	175 ░C	-55 C	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.45
		10	$ 2.25
		100	$ 1.57
		500	$ 1.28
		1000	$ 1.18
	Digi-Reel®	1	$ 3.45
		10	$ 2.25
		100	$ 1.57
		500	$ 1.28
		1000	$ 1.18
	Tape & Reel (TR)	2500	$ 1.10
Newark	Each	2500	$ 1.18
		5000	$ 1.15
ON Semiconductor	N/A	1	$ 1.01

Description

General part information

FFSD0665B-F085 Series

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.