Specification	FCH077N65F-F155

Current - Continuous Drain (Id) @ 25°C	54 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	164 nC
Input Capacitance (Ciss) (Max) @ Vds	7109 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	481 W
Rds On (Max) @ Id, Vgs	77 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

FCH077N65F Series

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650 V, 54 A, 77 mΩ, TO-247

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case
ON Semiconductor FCH077N65F-F155	N-Channel	54 A	TO-247-3	5 V	7109 pF	164 nC	MOSFET (Metal Oxide)	77 mOhm	481 W	650 V	20 V	10 V	-55 °C	150 °C	Through Hole	TO-247-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	66	$ 6.04
Newark	Each	250	$ 5.86
		500	$ 5.69
ON Semiconductor	N/A	1	$ 4.81

Description

General part information

FCH077N65F Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

Package Drawing-340CH-TO-247-3LD

Package Drawing