Specification	NVMFS040N10MCLT1G

Current - Continuous Drain (Id) @ 25°C	6.5 A, 21 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	36 W, 3.5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	38 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NVMFS040N10MCL Series

Single N-Channel Power MOSFET 100V, 28A, 26mΩ

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Grade	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package
ON Semiconductor NVMFS040N10MCLT1G	8-PowerTDFN 5 Leads	-55 °C	175 ░C	5-DFN (5x6)	8-SOFL	3 V	MOSFET (Metal Oxide)	AEC-Q101	8.3 nC	N-Channel	3.5 W 36 W	500 pF	6.5 A 21 A	20 V	38 mOhm	Surface Mount	100 V	Automotive	4.5 V 10 V
ON Semiconductor NVMFWS040N10MCLT1G	8-PowerTDFN 5 Leads	-55 °C	175 ░C			3 V	MOSFET (Metal Oxide)	AEC-Q101	8.3 nC	N-Channel	3.5 W 36 W	500 pF	6.5 A 21 A	20 V	38 mOhm	Surface Mount Wettable Flank	100 V	Automotive	4.5 V 10 V	4.9x5.9 5-DFNW 8-SOFL-WF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly