Specification	FJV1845FMTF

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	300 hFE
Frequency - Transition	110 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Supplier Device Package	SOT-23-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

FJV1845 Series

NPN Epitaxial Silicon Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Transistor Type	Package / Case	Supplier Device Package	Frequency - Transition	Operating Temperature
ON Semiconductor FJV1845EMTF	400 hFE	50 nA	50 mA	120 V	300 mV	Surface Mount	NPN	SC-59 SOT-23-3 TO-236-3	SOT-23-3	110 MHz	150 °C
ON Semiconductor FJV1845EMTF	400 hFE	50 nA	50 mA	120 V	300 mV	Surface Mount	NPN	SC-59 SOT-23-3 TO-236-3	SOT-23	110 MHz	150 °C
ON Semiconductor FJV1845PMTF	200	50 nA	50 mA	120 V	300 mV	Surface Mount	NPN	SC-59 SOT-23-3 TO-236-3	SOT-23-3	110 MHz	150 °C
ON Semiconductor FJV1845FMTF	300 hFE	50 nA	50 mA	120 V	300 mV	Surface Mount	NPN	SC-59 SOT-23-3 TO-236-3	SOT-23-3	110 MHz	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources