Specification	NTMFS4983NFT3G

Current - Continuous Drain (Id) @ 25°C	22 A, 106 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	47.9 nC
Input Capacitance (Ciss) (Max) @ Vds	3250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	38 W, 1.7 W
Rds On (Max) @ Id, Vgs	2.1 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

NTMFS4983NF Series

Single N-Channel Power MOSFET 30V, 106A, 2.1mΩ

Part	Mounting Type	Supplier Device Package	Supplier Device Package	Technology	FET Type	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTMFS4983NFT3G	Surface Mount	5-DFN (5x6)	8-SOFL	MOSFET (Metal Oxide)	N-Channel	8-PowerTDFN 5 Leads	1.7 W 38 W	47.9 nC	3250 pF	2.1 mOhm	-55 °C	150 °C	30 V	4.5 V 10 V	20 V	2.3 V	22 A 106 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 30 V, 106 A, Single N−Channel, SO−8 FL

Technical documentation and resources