Specification	KSB834WYTM

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	9 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]	1.5 W
Supplier Device Package	TO-263 (D2PAK)
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	60 V

KSB834W Series

PNP Epitaxial Silicon Transistor

Part	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Power - Max [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Frequency - Transition	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Transistor Type
ON Semiconductor KSB834Y	100 µA	60 V	3 A	150 °C	1.5 W	TO-220-3	100	Through Hole	9 MHz	TO-220-3	1 V	PNP
ON Semiconductor KSB834WYTM	100 µA	60 V	3 A	150 °C	1.5 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	100	Surface Mount	9 MHz	TO-263 (D2PAK)	1 V	PNP

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources