Discrete Semiconductor Products

PMDPB80XP,115

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MOSFET 2P-CH 20V 2.7A 6HUSON

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Discrete Semiconductor Products

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MOSFET 2P-CH 20V 2.7A 6HUSON

Technical Specifications

Parameters and characteristics for this part

Specification	PMDPB80XP,115

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	2.7 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	1.8 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	8.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	550 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UFDFN Exposed Pad
Power - Max [Max]	485 mW
Rds On (Max) @ Id, Vgs	102 mOhm
Supplier Device Package	6-HUSON (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	FET Feature	FET Feature	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Configuration	Current - Continuous Drain (Id) @ 25°C
Freescale Semiconductor - NXP PMDPB80XP,115	1.8 V	Logic Level Gate	6-HUSON (2x2)	8.6 nC	-55 °C	150 °C	485 mW	102 mOhm	6-UFDFN Exposed Pad	550 pF	1 V	MOSFET (Metal Oxide)	20 V	Surface Mount	2 P-Channel	2.7 A

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General part information

Mosfet Array 20V 2.7A 485mW Surface Mount 6-HUSON (2x2)

Technical documentation and resources