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SOT-223 (TO-261)
Discrete Semiconductor Products

MMFT960T1G

Obsolete
ON Semiconductor

SMALL SIGNAL MOSFET 60V 300MA 1.7 OHM SINGLE N-CHANNEL SOT-223

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SOT-223 (TO-261)
Discrete Semiconductor Products

MMFT960T1G

Obsolete
ON Semiconductor

SMALL SIGNAL MOSFET 60V 300MA 1.7 OHM SINGLE N-CHANNEL SOT-223

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMMFT960T1G
Current - Continuous Drain (Id) @ 25°C300 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.2 nC
Input Capacitance (Ciss) (Max) @ Vds65 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-261AA, TO-261-4
Rds On (Max) @ Id, Vgs1.7 Ohm
Supplier Device PackageSOT-223 (TO-261)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

MMFT960 Series

This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc-dc converters, solenoid and relay drivers. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.