NGTD17R120F2SWK

Obsolete

RECTIFIER 1200V 35A FS2 BARE DIE

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Discrete Semiconductor Products

Obsolete

RECTIFIER 1200V 35A FS2 BARE DIE

Technical Specifications

Parameters and characteristics for this part

Specification	NGTD17R120F2SWK

Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 °C
Package / Case	Die
Supplier Device Package	Die
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Rectifier 1200V 35A FS2 bare die

Part	Package / Case	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Mounting Type	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Technology
ON Semiconductor NGTD17R120F2SWK	Die	1.8 V	175 °C	Surface Mount	1 µA	Die	1.2 kV	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Rectifier bare die intended for use as IGBT reverse diode

Technical documentation and resources