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SOT-236AB
Discrete Semiconductor Products

NX138BKWX

Active
Nexperia USA Inc.

60 V, N-CHANNEL TRENCH MOSFET

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SOT-236AB
Discrete Semiconductor Products

NX138BKWX

Active
Nexperia USA Inc.

60 V, N-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationNX138BKWX
Current - Continuous Drain (Id) @ 25°C210 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 2.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]0.7 nC
Input Capacitance (Ciss) (Max) @ Vds20 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-323, SC-70
Power Dissipation (Max)1.33 W, 266 mW
Rds On (Max) @ Id, Vgs3.5 Ohm
Supplier Device PackageSOT-323
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.21
10$ 0.14
100$ 0.07
500$ 0.06
1000$ 0.04
Digi-Reel® 1$ 0.21
10$ 0.14
100$ 0.07
500$ 0.06
1000$ 0.04
N/A 0$ 0.23
Tape & Reel (TR) 3000$ 0.04
6000$ 0.03
9000$ 0.03
30000$ 0.03
75000$ 0.02
150000$ 0.02

Description

General part information

NX138 Series

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.