S8CKHM3/I

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DIODE GEN PURP 800V 8A DO214AB

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Discrete Semiconductor Products

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DIODE GEN PURP 800V 8A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	S8CKHM3/I

Capacitance @ Vr, F	79 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMC, DO-214AB
Qualification	AEC-Q101
Reverse Recovery Time (trr)	4 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	985 mV

Part	Grade	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Qualification	Technology	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Package / Case	Mounting Type	Speed	Speed	Capacitance @ Vr, F
Vishay General Semiconductor - Diodes Division S8CKHM3/I	Automotive	4 µs	800 V	DO-214AB (SMC)	AEC-Q101	Standard	8 A	985 mV	150 °C	-55 °C	10 µA	DO-214AB SMC	Surface Mount	Standard Recovery >500ns	200 mA	79 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 8A Surface Mount DO-214AB (SMC)

Technical documentation and resources