
Integrated Circuits (ICs)
IS43DR16128C-3DBLI
ActiveISSI, Integrated Silicon Solution Inc
DRAM CHIP DDR2 SDRAM 2G-BIT 128MX16 1.8V 84-PIN TWBGA
Deep-Dive with AI
Search across all available documentation for this part.

Integrated Circuits (ICs)
IS43DR16128C-3DBLI
ActiveISSI, Integrated Silicon Solution Inc
DRAM CHIP DDR2 SDRAM 2G-BIT 128MX16 1.8V 84-PIN TWBGA
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IS43DR16128C-3DBLI |
|---|---|
| Access Time | 450 ps |
| Clock Frequency | 333 MHz |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Memory Organization | 128M x 16 |
| Memory Size | 2 Gbit |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 C |
| Operating Temperature [Min] | -40 ¯C |
| Package / Case | 84-TFBGA |
| Supplier Device Package | 84-TWBGA (8x12.5) |
| Technology | SDRAM - DDR2 |
| Voltage - Supply [Max] | 1.9 V |
| Voltage - Supply [Min] | 1.7 V |
| Write Cycle Time - Word, Page | 15 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IS43DR16128C Series
Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Double data rate interface: two data transfers per clock cycle
Documents
Technical documentation and resources
No documents available