Specification	NVMFWS027N10MCLT1G

Current - Continuous Drain (Id) @ 25°C	7.9 A, 28 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	800 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	46 W, 3.5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	26 mOhm
Supplier Device Package	4.9x5.9, 8-SOFL-WF, 5-DFNW
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NVMFS027N10MCL Series

Single N-Channel Power MOSFET 100V, 28A, 26mΩ

Part	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Grade	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Supplier Device Package	Package / Case	Supplier Device Package
ON Semiconductor NVMFS027N10MCLT1G	3.5 W 46 W	11.5 nC	MOSFET (Metal Oxide)	Automotive	20 V	26 mOhm	800 pF	AEC-Q101	100 V	7.9 A 28 A	3 V	N-Channel	Surface Mount	4.5 V 10 V	-55 °C	175 ░C	5-DFN (5x6)	8-SOFL	8-PowerTDFN 5 Leads
ON Semiconductor NVMFWS027N10MCLT1G	3.5 W 46 W	11.5 nC	MOSFET (Metal Oxide)	Automotive	20 V	26 mOhm	800 pF	AEC-Q101	100 V	7.9 A 28 A	3 V	N-Channel	Surface Mount Wettable Flank	4.5 V 10 V	-55 °C	175 ░C			8-PowerTDFN 5 Leads	4.9x5.9 5-DFNW 8-SOFL-WF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Single N-Channel Power MOSFET 100V, 28A, 26mΩ

Technical documentation and resources