NSVMUN2132T1G
ActivePNP BIPOLAR DIGITAL TRANSISTOR (BRT)
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NSVMUN2132T1G
ActivePNP BIPOLAR DIGITAL TRANSISTOR (BRT)
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Technical Specifications
Parameters and characteristics for this part
| Specification | NSVMUN2132T1G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 15 |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 230 mW |
| Qualification | AEC-Q101 |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4700 Ohms |
| Supplier Device Package | SC-59 |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 0.04 | |
| 6000 | $ 0.04 | |||
| 9000 | $ 0.03 | |||
| 15000 | $ 0.03 | |||
| 21000 | $ 0.03 | |||
| 30000 | $ 0.03 | |||
| 75000 | $ 0.03 | |||
| 150000 | $ 0.02 | |||
| 300000 | $ 0.02 | |||
| ON Semiconductor | N/A | 1 | $ 0.02 | |
Description
General part information
MUN2132 Series
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Documents
Technical documentation and resources
