Discrete Semiconductor Products

KSE340STU

Obsolete

NPN EPITAXIAL SILICON TRANSISTOR

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

NPN EPITAXIAL SILICON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	KSE340STU

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	30
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	20 W
Supplier Device Package	TO-126-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	300 V

NPN Epitaxial Silicon Transistor

Part	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Transistor Type	Power - Max [Max]
ON Semiconductor KSE340STSTU	100 µA	30	150 °C	Through Hole	TO-126-3 TO-225AA	TO-126-3	300 V	500 mA	NPN	20 W
ON Semiconductor KSE340STU	100 µA	30	150 °C	Through Hole	TO-126-3 TO-225AA	TO-126-3	300 V	500 mA	NPN	20 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources