Discrete Semiconductor Products

PHD38N02LT,118

Obsolete

MOSFET N-CH 20V 44.7A DPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 44.7A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHD38N02LT,118

Current - Continuous Drain (Id) @ 25°C	44.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	15.1 nC
Input Capacitance (Ciss) (Max) @ Vds	800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	57.6 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Rds On (Max) @ Id, Vgs
Nexperia USA Inc. PHD38N02LT,118	175 °C	-55 °C	12 V	DPAK	15.1 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	800 pF	Surface Mount	5 V	57.6 W	20 V	1.5 V	44.7 A	MOSFET (Metal Oxide)	N-Channel	16 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.19

General part information

N-Channel 20 V 44.7A (Tc) 57.6W (Tc) Surface Mount DPAK

Technical documentation and resources