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Integrated Circuits (ICs)

R1QGA4418RBG-25IB0

Obsolete
Renesas Electronics Corporation

QDRII/DDRII/ QDRII+/DDRII+ SRAM

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Integrated Circuits (ICs)

R1QGA4418RBG-25IB0

Obsolete
Renesas Electronics Corporation

QDRII/DDRII/ QDRII+/DDRII+ SRAM

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationR1QGA4418RBG-25IB0
Memory FormatDRAM
Memory InterfaceHSTL
Memory Organization8 M
Memory Size144 Gbit

Pricing

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Description

General part information

R1QGA4418RBG-25I Series

DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read cycles, thus the data is written or read twice every clock cycle. This provides for a significantly higher transfer rate than standard synchronous SRAM devices. In applications that require continuous read/write capability such as in look-up tables for network switches and routers, DDR SRAMs are an ideal solution. QDR SRAMs can provide double data rate (DDR) operation on each data pin through independently operated read and write ports, and can transfer four words of data on one clock cycle. This allows for bus contention to be virtually eliminated between the memory controller and the SRAM. The QDR SRAMs can support high end network switches, routers and other communication solutions. 。

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