Discrete Semiconductor Products

2SK1528STR-E

LTB

NCH SINGLE POWER MOSFET 900V 4A 4000MOHM LDPAK(S)-(1)/TO-263

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Discrete Semiconductor Products

LTB

NCH SINGLE POWER MOSFET 900V 4A 4000MOHM LDPAK(S)-(1)/TO-263

Technical Specifications

Parameters and characteristics for this part

Specification	2SK1528STR-E

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	740 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-83
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	4 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3 V

Nch Single Power Mosfet 900V 4A 4000Mohm LDPAK(S)-(1)/To-263

Part	Power Dissipation (Max)	Technology	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs
Renesas Electronics Corporation 2SK1528STR-E	60 W	MOSFET (Metal Oxide)	SC-83	N-Channel	900 V	10 V	30 V	150 °C	Surface Mount	4 A	3 V	740 pF	4 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 9.36

General part information

The 2SK1528S is a Nch Single Power Mosfet 900V 4A 4000Mohm LDPAK(S)-(1)/To-263.

Technical documentation and resources