Specification	DMT4008LFV-7

Current - Continuous Drain (Id) @ 25°C	54.8 A, 12.1 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	17.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1179 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	1.9 W, 35.7 W
Rds On (Max) @ Id, Vgs	7.9 mOhm
Supplier Device Package	PowerDI3333-8 (Type UX)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

DMT4008LFV Series

40V N-Channel Enhancement Mode MOSFET

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMT4008LFV-13	40 V	20 V	PowerDI3333-8 (Type UX)	1179 pF	Surface Mount	-55 °C	150 °C	8-PowerVDFN	1.9 W 35.7 W	3 V	MOSFET (Metal Oxide)	N-Channel	4.5 V 10 V	12.1 A 54.8 A	7.9 mOhm	17.1 nC
Diodes Inc DMT4008LFV-7	40 V	20 V	PowerDI3333-8 (Type UX)	1179 pF	Surface Mount	-55 °C	150 °C	8-PowerVDFN	1.9 W 35.7 W	3 V	MOSFET (Metal Oxide)	N-Channel	4.5 V 10 V	12.1 A 54.8 A	7.9 mOhm	17.1 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	2000	$ 0.32
		4000	$ 0.29
		6000	$ 0.28
		10000	$ 0.26
		14000	$ 0.26

Description

General part information

DMT4008LFV Series

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.