Discrete Semiconductor Products

2SC6082-EPN-1E

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TRANS NPN 50V 15A TO220F-3SG

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Discrete Semiconductor Products

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TRANS NPN 50V 15A TO220F-3SG

Technical Specifications

Parameters and characteristics for this part

Specification	2SC6082-EPN-1E

Current - Collector (Ic) (Max) [Max]	15 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	195 MHz
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220F-3SG
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Operating Temperature	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Mounting Type	Power - Max [Max]
ON Semiconductor 2SC6082-1E	150 °C	NPN	200	TO-220-3 Full Pack	TO-220F-3SG	50 V	15 A	10 µA	400 mV	195 MHz	Through Hole	2 W
ON Semiconductor 2SC6082-EPN-1E		NPN	200	TO-220-3 Full Pack	TO-220F-3SG	50 V	15 A	10 µA	400 mV	195 MHz	Through Hole	2 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 50 V 15 A 195MHz 2 W Through Hole TO-220F-3SG

Technical documentation and resources