Discrete Semiconductor Products

SI8469DB-T2-E1

Obsolete

MOSFET P-CH 8V 4.6A 4MICROFOOT

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 8V 4.6A 4MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8469DB-T2-E1

Current - Continuous Drain (Id) @ 25°C	4.6 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-UFBGA
Power Dissipation (Max)	1.8 W, 780 mW
Rds On (Max) @ Id, Vgs	64 mOhm
Supplier Device Package	4-Microfoot
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max) @ Id	800 mV

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI8469DB-T2-E1	5 V	4.6 A	8 V	800 mV	900 pF	P-Channel	MOSFET (Metal Oxide)	64 mOhm	1.8 W 780 mW	-55 °C	150 °C	Surface Mount	4-Microfoot	4-UFBGA	4.5 V	17 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 8 V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot

Technical documentation and resources