Discrete Semiconductor Products

SI8469DB-T2-E1

Obsolete

MOSFET P-CH 8V 4.6A 4MICROFOOT

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 8V 4.6A 4MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8469DB-T2-E1

Current - Continuous Drain (Id) (Ta)	4.6 A, 4.6 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	17 nC, 17 nC
Input Capacitance (Ciss) (Max)	900 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	4-UFBGA
Package Name	4-Microfoot
Power Dissipation (Max)	780 mW, 1.8 W
Rds On (Max)	64 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max)	800 mV

Part	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)	FET Type	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Package Name	Gate Charge (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)
Vishay Dale SI8469DB-T2-E1	4.6 A 4.6 A	900 pF	P-Channel	8 V	MOSFET (Metal Oxide)	Surface Mount	1.8 W 780 mW	5 V	4.5 V	800 mV	4-Microfoot	17 nC 17 nC	4-UFBGA	-55 °C	150 °C	64 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

P-Channel 8 V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot

Technical documentation and resources