
HFA3096BZ
ActiveBIPOLAR TRANSISTOR ARRAY, NPN, PNP, 8 V, 150 MW, 37 MA, 130 HFE, SOIC
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HFA3096BZ
ActiveBIPOLAR TRANSISTOR ARRAY, NPN, PNP, 8 V, 150 MW, 37 MA, 130 HFE, SOIC
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Technical Specifications
Parameters and characteristics for this part
| Specification | HFA3096BZ |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 65 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 hFE, 20 hFE |
| Frequency - Transition | 8 GHz, 5.5 GHz |
| Mounting Type | Surface Mount |
| Noise Figure (dB Typ @ f) | 3.5 dB |
| Operating Temperature | 150 °C |
| Package / Case | 16-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Supplier Device Package | 16-SOIC |
| Transistor Type | 3 NPN, 2 PNP |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 11.80 | |
| 10 | $ 10.12 | |||
| 480 | $ 7.44 | |||
| 960 | $ 6.69 | |||
Description
General part information
HFA3096 Series
The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fTof 8GHz while the PNP transistors provide a fTof 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. Application note AN9315 illustrates the use of these devices as RF amplifiers.
Documents
Technical documentation and resources