Discrete Semiconductor Products

BSP250,135

NRND

MOSFET P-CH 30V 3A SOT223

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Discrete Semiconductor Products

NRND

MOSFET P-CH 30V 3A SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	BSP250,135

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	250 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1.65 W
Rds On (Max) @ Id, Vgs	250 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.8 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Operating Temperature	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)
Freescale Semiconductor - NXP BSP250,115	P-Channel	3 A	TO-261-4 TO-261AA	2.8 V	SOT-223	10 V	250 pF	250 mOhm	Surface Mount	25 nC	1.65 W	150 °C	MOSFET (Metal Oxide)	20 V	30 V
Freescale Semiconductor - NXP BSP250,135	P-Channel	3 A	TO-261-4 TO-261AA	2.8 V	SOT-223	10 V	250 pF	250 mOhm	Surface Mount	25 nC	1.65 W	150 °C	MOSFET (Metal Oxide)	20 V	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 3A (Tc) 1.65W (Ta) Surface Mount SOT-223

Technical documentation and resources